SFT1202-E دیتاشیت

SFT1202

مشخصات دیتاشیت

نام دیتاشیت SFT1202
حجم فایل 416.261 کیلوبایت
نوع فایل pdf
تعداد صفحات 9

مشاهده دیتاشیت SFT1202

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مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi SFT1202-E
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 2A
  • Power Dissipation (Pd): 1W
  • Transition Frequency (fT): 140MHz
  • DC Current Gain (hFE@Ic,Vce): 200@100mA,5V
  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 150V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 110mV@1A,100mA
  • Package: TO-251
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Bulk
  • Part Status: Active
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 165mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 140MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: TP
  • Base Part Number: SFT120
  • detail: Bipolar (BJT) Transistor NPN 150V 2A 140MHz 1W Through Hole TP

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